PTFA182001E confidential, limited internal distribution data sheet 1 of 10 rev. 01, 2008-03-12 all published data at t case = 25c unless otherwise indicated esd: electrostatic discharge sensitive device?observe handling precautions! 2-tone drive-up v dd = 30 v, i dq = 1600 ma, ? = 1840 mhz, tone spacing = 1 mhz -65 -60 -55 -50 -45 -40 -35 -30 -25 37 39 41 43 45 47 49 51 53 55 output power, pep (dbm) 5 10 15 20 25 30 35 40 45 drain efficiency (%) im5 efficiency im7 intermodulation distortion (dbc) im3 description the PTFA182001E is a 200-watt ldmos fet intended for edge applications from 1805 to 1880 mhz. features include input and output matching, and thermally-enhanced single-ended package with a slotted flange. manufactured with infineon's advanced ldmos process, this device provides excellent thermal performance and superior reliability. PTFA182001E package h-30260-2 thermally-enhanced high power rf ldmos fet 200 w, 1805 ? 1880 mhz features ? pb-free, rohs-compliant and thermally-enhanced package ? broadband internal matching ? typical edge performance at 1836.6 mhz, 30 v - average output power = 50 dbm - linear gain = 16.3 db - efficiency = 37% - evm = 3.1% - 400 khz modulation = ?61 dbc - 600 khz modulation = ?76 dbc ? typical cw performance, 1880 mhz, 30 v - output power at p?1db = 220 w - efficiency = 49% ? integrated esd protection: human body model, class 2 (minimum) ? excellent thermal stability, low hci drift ? capable of handling 5:1 vswr @ 30 v, 200 w (cw) output power *see infineon distributor for future availability. rf characteristics two-tone measurements ( tested in infineon test fixture ) v dd = 30 v, i dq = 1.6 a, p out = 200 w pep, ? = 1840 mhz, tone spacing = 1 mhz characteristic symbol min typ max unit gain g ps 15.7 16.6 ? db drain efficiency h d 37 38 ? % intermodulation distortion imd ? ?31.5 ?30 dbc
data sheet 2 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution *see infineon distributor for future availability. dc characteristics characteristic conditions symbol min typ max unit drain-source breakdown voltage v gs = 0 v, i ds = 10 ma v (br)dss 65 ? ? v drain leakage current v ds = 28 v, v gs = 0 v i dss ? ? 1.0 a drain leakage current v ds = 63 v, v gs = 0 v i dss ? ? 10.0 a on-state resistance v gs = 10 v, v ds = 0.1 v r ds(on) ? 0.05 ? w operating gate voltage v ds = 30 v, i dq = 1.8 a v gs 2.0 2.5 3.0 v gate leakage current v gs = 10 v, v ds = 0 v i gss ? ? 1.0 a maximum ratings parameter symbol value unit drain-source voltage v dss 65 v gate-source voltage v gs ?0.5 to +12 v junction temperature t j 200 c total device dissipation p d 625 w above 25c derate by 3.57 w/c storage temperature range t stg ?40 to +150 c thermal resistance (t case = 70c, 200 w cw) r q jc 0.28 c/w ordering information type and version package type package description marking PTFA182001E v1 h-30260-2 thermally-enhanced slotted flange, single-ended PTFA182001E
data sheet 3 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution broadband performance v dd = 30 v, i dq = 1600 ma, p out = 50 w 10 15 20 25 30 35 40 1760 1800 1840 1880 1920 frequency (mhz) gain (db), efficiency (%) -35 -30 -25 -20 -15 -10 -5 input return loss (db) gain efficiency return loss power sweep, cw conditions v dd = 30 v, i dq = 1600 ma, ? = 1880 mhz 13 14 15 16 17 18 30 32 34 36 38 40 42 44 46 48 50 52 54 output power (dbm) gain (db) 0 10 20 30 40 50 drain efficiency (%) gain efficiency t case = 25c t case = 90c typical performance (data taken in a production test fixture) intermodulation distortion products vs. tone spacing v dd = 30 v i dq = 1600 ma , ? = 1840 mhz, p out = 53 dbm pep -60 -50 -40 -30 -20 -10 0 0 5 10 15 20 25 30 35 40 tone spacing (mhz) intermodulation distortion (dbc) 3rd order 5th 7th edge evm and modulation spectrum vs. quiescent current v dd = 30 v, ? = 1836.6 mhz, p out = 50 dbm 2.0 2.2 2.4 2.6 2.8 3.0 3.2 3.4 3.6 1.4 1.5 1.6 1.7 1.8 1.9 2.0 quiescent current (a) evm rms (avg. %) . -90 -80 -70 -60 -50 -40 -30 -20 -10 modulation spectrum (dbc) evm 400 khz 600 khz
data sheet 4 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution edge modulation spectrum performance v dd = 30 v, i dq = 1600 ma, ? = 1879.8 mhz -90 -80 -70 -60 -50 -40 34 36 38 40 42 44 46 48 50 52 output power (dbm) modulation spectrum (dbc) 0 10 20 30 40 50 drain efficiency (%) efficiency 400 khz 600 khz output peak-to-average ratio compression (parc) at various power levels v dd = 30 v, i dq = 1600 ma, ? = 1880 mhz, single-carrier wcdma input par = 7.5 db 0.001 0.01 0.1 1 10 100 1 2 3 4 5 6 7 8 peak-to-average (db) probability (%) input 46.0 dbm 48.0 dbm 50.0 dbm 50.5 dbm 52.0 dbm edge modulation spectrum performance v dd = 30 v, i dq = 1600 ma, ? = 1836.6 mhz -90 -80 -70 -60 -50 -40 34 36 38 40 42 44 46 48 50 52 output power, avg. (dbm) modulation spectrum (dbc) 0 10 20 30 40 50 drain efficiency (%) efficiency 400 khz 600 khz typical performance (cont.) edge evm performance v dd = 30 v, i dq = 1600 ma, ? = 1836.6 mhz 0 1 2 3 4 5 34 36 38 40 42 44 46 48 50 52 output power, avg. (dbm) evm rms (avg. %) . 0 10 20 30 40 50 drain efficiency (%) evm efficiency
data sheet 5 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution typical performance (cont.) power sweep (cw) over temperature v dd = 30 v, i dq = 1600 ma, ? = 1880 mhz 12 13 14 15 16 17 18 1 10 100 1000 output power (w) power gain (db) -15c 25c 85c voltage sweep i dq = 1600 ma, ? = 1840 mhz, tone spacing = 1 mhz, output power (pep) = 53 dbm -50 -40 -30 -20 -10 23 25 27 29 31 33 supply voltage (v) 3rd order imd (dbc) 10 20 30 40 50 gain efficiency im3 up gain (db), drain efficiency (%) bias voltage vs. temperature voltage normalized to typical gate voltage, series show current 0.95 0.96 0.97 0.98 0.99 1.00 1.01 1.02 1.03 -20 0 20 40 60 80 100 case temperature (c) normalized bias voltage (v) 0.44 a 1.32 a 2.20 a 3.30 a 6.61 a 9.91 a
data sheet 6 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution z source z load g s d frequency z source w z load w mhz r jx r jx 1770 11.72 ?4.39 1.22 1.17 1800 11.45 ?4.87 1.17 1.44 1840 10.97 ?5.48 1.15 1.78 1880 10.33 ?5.99 1.08 2.08 1910 9.76 ?6.27 1.04 2.35 see next page for circuit information 0.1 0.3 0.2 0 . 1 0 . 2 0 . 1 0 . 2 r - < - - - w a v e l e n g t h s t o w a r d l o a d - 0 . 0 1770 mhz 1770 mhz 1910 mhz z load z source 1910 mhz z 0 = 50 w broadband circuit impedance
data sheet 7 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution c3 0.001f c2 0.001f q1 bcp56 r2 1.3k v qq1 lm7805 c1 0.001f v dd r1 1.2k v r3 510 v r8 2k v r5 510 v c25 1.4pf c13 10pf c26 1.4pf l 3 l 2 j1 l 1 c7 0.6pf c8 10pf l 13 l 7 l 8 l 5 l 4 l 6 c12 10pf c9 1.5pf c11 0.1f l 10 c19 10pf l 12 c5 0.1f c4 4.7f 16v c6 10pf dut l 9 l 11 l 14 c20 1f c10 4.7f 16v j2 l 17 l 18 l 16 l 15 c28 0.2pf c23 0.1f c22 2.2f c21 1f l2 c15 1f c14 1f c16 2.2f c27 10pf c18 100f 50v c17 0.1f l1 v dd c24 100f 50v r6 10 v r7 10 v reference circuit (cont.) reference circuit schematic for ? = 1840 mhz circuit assembly information dut PTFA182001E ldmos transistor pcb 0.76 mm [.030"] thick, e r = 3.48 rogers ro4350 1 oz. copper microstrip electrical characteristics at 1840 mhz dimensions: l x w (mm) dimensions: l x w (in.) l 1 0.056 l , 50.2 w 5.54 x 1.68 0.218 x 0.066 l 2 0.024 l , 50.2 w 2.39 x 1.68 0.094 x 0.066 l 3 0.051 l , 50.2 w 5.00 x 1.68 0.197 x 0.066 l 4 0.050 l , 50.2 w 4.93 x 1.68 0.194 x 0.066 l 5 0.019 l , 42.8 w 1.88 x 2.16 0.074 x 0.085 l 6 (taper) 0.054 l , 42.8 w ./ 6.9 w 5.23 x 2.16 / 20.32 0.206 x 0.085 / 0.800 l 7 0.040 l , 6.9 w 3.63 x 20.32 0.143 x 0.800 l 8 0.021 l , 6.9 w 1.85 x 20.32 0.073 x 0.800 l 9, l 10 0.186 l , 59.1 w 18.59 x 1.27 0.732 x 0.050 l 11, l 12 0.328 l , 50.7 w 32.39 x 1.65 1.275 x 0.065 l 13 0.062 l , 5.0 w 5.51 x 28.83 0.217 x 1.135 l 14 (taper) 0.043 l , 5.0 w ./ 15.1 w 3.84 x 28.83 / 8.43 0.151 x 1.135 / 0.332 l 15 (taper) 0.021 l , 15.1 w ./ 41.2 w 1.96 x 8.43 / 2.29 0.077 x 0.332 / 0.090 l 16 0.026 l , 41.2 w 2.49 x 2.29 0.098 x 0.090 l 17 0.095 l , 50.2 w 9.42 x 1.68 0.371 x 0.066 l 18 0.072 l , 50.2 w 7.11 x 1.68 0.280 x 0.066
data sheet 8 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution vdd gnd reference circuit (cont.) reference circuit assembly diagram* (not to scale) component description suggested manufacturer p/n or comment c1, c2, c3 capacitor, 0.001 f digi-key pcc1772ct-nd c4, c10 capacitor, 4.7 f, 16 v digi-key pcs3475ct-nd c5, c11, c17, c23 capacitor, 0.1 f digi-key pcc104bct-nd c6, c12 capacitor, 10 pf avx garrett electronics 08051j100gbttr c7 ceramic capacitor, 0.6 pf atc 100b 0r6 c8, c13, c19, c27 ceramic capacitor, 10 pf atc 100b 100 c9 ceramic capacitor, 1.5 pf atc 100b 1r5 c14, c15, c20, c21 ceramic capacitor, 1 f digi-key 445-1411-2-nd c16, c22 capacitor, 2.2 f digi-key 445-1447-2-nd c18, c24 electrolytic capacitor, 100 f, 50 v digi-key pce3718ct-nd c25, c26 ceramic capacitor, 1.4 pf atc 100b 1r4 c28 ceramic capacitor, 0.2 pf atc 100a 0r2 l1, l2 ferrite, 8.9 mm elna magnetics bds 4.6/3/8.9-4s2 q1 transistor infinion technologies bcp56 qq1 voltage regulator national semiconductor lm7805 r1 chip resistor 1.2k ohms digi-key p1.2kgct-nd r2 chip resistor 1.3k ohms digi-key p1.3kgct-nd r3, r5 chip resistor 510 ohms digi-key p510ect-nd r4 not used r6, r7 chip resistor 10 ohms digi-key p10ect-nd r8 potentiometer, 2 k-ohms digi-key 3224w-202etr-nd *gerber files for this circuit available on request
data sheet 9 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution c l c l 260-cases_30260 / 3-11-08 0.0381 [.0015] -a- 22.350.23 [.880.009] (2x 4.830.50 [.190.020]) 2x 12.70 [.500] 23.370.51 [.920.020] 4x r 1.52 [.060] 2x 3.25 [.128] 34.04 [1.340] d s g flange 13.72 [.540] 45 x 2.03 [.080] sph 1.57 [.062] 2x 1.63 [.064] r 4.110.38 [.162.015] 27.94 [1.100] c l 1.02 [.040] +0.10 lid 13.21 ?0.15 +.004 [.520 ] ?.006 package outline specifications package h-30260-2 diagram notes?unless otherwise specified: 1. lead thickness: 0.10 +0.051/?0.025 [.004 +.002/?.001]. 2. all tolerances 0.127 [.005] unless specified otherwise. 3. pins: d = drain, s = source, g = gate. 4. interpret dimensions and tolerances per asme y14.5m-1994. 5. primary dimensions are mm. alternate dimensions are inches. 6. gold plating thickness: s - flange: 2.54 micron [100 microinch] (min) d, g - leads: 1.14 0.38 micron [45 15 microinch] find the latest and most complete information about products and packaging at the infineon internet page http://www.infineon.com/rfpower
data sheet 10 of 10 rev. 01, 2008-03-12 PTFA182001E confidential, limited internal distribution revision history: 2008-03-12 data sheet previous version: none page subjects (major changes since last revision) 1, 3, 9, 10 update to product v4, with ne w pac kage technologies . update pac kage outline diag r ams . goldmos ? is a registered trademark of infineon technologies ag. edition 2008-03-12 published by infineon technologies ag 81726 munich , germany ? 2006 infineon technologies ag all rights reserved. legal disclaimer the information given in this document shall in no event be regarded as a guarantee of conditions or characteristics. with respect to any examples or hints given herein, any typical values stated herein and/or any information regarding the application of the device, infineon technologies hereby disclaims any and all warranties and liabilities of any kind, including without limitation, warranties of non-infringement of intellectual property rights of any third party. information for further information on technology, delivery terms and conditions and prices, please contact the nearest infineon technologies office ( www.infineon.com/rfpower ). warnings due to technical requirements, components may contain dangerous substances. for information on the types in question, please contact the nearest infineon technologies office. infineon technologies components may be used in life-support devices or systems only with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system or to affect the safety or effectiveness of that device or system. life support devices or systems are intended to be implanted in the human body or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered. we listen to your comments any information within this document that you feel is wrong, unclear or missing at all? your feedback will help us to continuously improve the quality of this document. please send your proposal (including a reference to this document) to: highpowerrf@infineon.com to request other information, contact us at: +1 877 465 3667 (1-877-go-ldmos) usa or +1 408 776 0600 international
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